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National Multi-User Silicon Carbide Research and Fabrication Laboratory

The National Multi-User Silicon Carbide Research Fab (MUSiC), is the only low-volume SiC integrated circuit fabrication lab, as a national resource open for your use, for prototyping and proof-of-principle demonstrations of novel ideas, all of which provide the opportunity for all American researchers to develop new and novel breakthroughs in the semiconductor area.

 

MUSiC addresses and removes many of the roadblocks facing the current and future competitiveness of US research and ingenuity in SiC electronics for a broad range of devices, circuits, and applications analogous to how silicon fabrication addresses a vast array of consumer, power, and communication electronic systems.

Current Capabilities

    • Implanter (B, Al, N, P – 900 keV Max)
    • SiC Epitaxial Growth (Currently, n-type only)
    • Activation (1900°C Max Process Temperature)
    • Oxidation (1500°C Max Process Temperature)
    • i-Line Stepper – 0.6 μm
    • Coater/Developer/Bake
    • Wet Process Cleaning
    • PECVD (SiO2, SiN, Oxynitride)
    • LPCVD Polysilicon Deposition
    • P-Doping for Polysilicon
    • LPCVD SiO2 and BPSG Deposition
    • Anneal Furnace (1200°C Max Process Temperature)
    • Plasma Etch – SiO2
    • Plasma Etch – Si and Limited SiC
    • Ashers
    • Ellipsometry
    • CD Vertification

Capabilities to be Installed Through 2026

    • Wet Process Semi-Automated Benches
    • Mask Aligner
    • Epi Defect Scanning
    • Rapid Thermal Annealing
    • ICP-MS
    • Plasma Metal Etch
    • Automated CV Measurement – Temperature Dependent
    • Automated Probe Stations
    • 4-Point Probe
    • Multi-Chamber PVD Sputter (Metal Deposition)
    • Multi-Chamber Metal Deposition (Sputter – 2nd Tool)
    • ICP Etcher – Multi-chamber RIE (Hardmask and SiC)

Capabilities Under Review

    • SiC Backgrinding
    • Laser Annealing
    • Contactless CV
    • Trench Gate (ALD or HTO)
    • Polyfill
    • Au/Ag/Cu Metallization